Summary of Research
Yongjin Jiang
Title: Professor
Physics Department of Zhejiang Normal University (2004.9-2014.12)
Title: Postdoc & visiting Scholar
Electrical Engineering Department, University of Minnesota (2015.1-2017.6)
Ningbo Institute of Industrial Technology, Chinese Academy of Sciences (2018.1-2018.5)
- Spin-orbital coupling and transport property in semiconductor electron gas.
- Electronic and Transport properties of Graphene
- Some problems in topological insulator
- Some properties of Black phosphorus thin film
- First principle calculation
- Group theoretical approach to construct kp Hamiltonian.
- Hofstadter-Butterfly of Twisted Bilayer Graphene: Landau level caulculation
Topics:
Spin-orbital coupling and transport property in semiconductor electron gas
1. edge-comfinement-induced spin-orbital coupling model
The confining potential will lead to Rashba kind of spin-orbital coupling near the edges
Y. J. Jiang and L. B. Hu, PRB,74,075302(2006)
Spin-orbital coupling and transport property in semiconductor electron gas
1. edge-comfinement-induced spin-orbital coupling model
Key finding:
Due to the symmetry of the confining potential, the spin-orbit coupling constant has opposite signs at both edges of the strip, thus the spins will be polarized along opposite directions at both edges of the strip when a charge current circulates through the strip, similar to an spin Hall effect.
Quotes from “All-electric quantum point contact spin-polarizer(Nature nanotechonology 4,759(2009))”:
“In this work, we present the first experimental study of spin-orbit coupling induced by the in-plane electric field due to the lateral
confining potential of a quantum wire and investigate its potential for spin injection and detection. Because this spin-orbit coupling
results from the lateral electric field, we call it lateral spin-orbit coupling. It is distinctly different from Rashba spin-orbit coupling,
which arises from the electric field due to the asymmetry in the confining potential of a quantum well (QW) structure. Recently, it
has been theoretically demonstrated that lateral spin-orbit coupling can induce accumulation of opposite spin species on the opposite
edges of a quantum wire when a current flows in it[7-9].” where [9] is our paper.
Spin-orbital coupling and transport property in semiconductor electron gas
2. Nonequilibrium spin polarization effects in a Rashba spin-orbit coupling system and contacting metallic leads
Y. J. Jiang, PRB,74,195308(2006)
Spin-orbital coupling and transport property in semiconductor electron gas
2. Nonequilibrium spin polarization effects in a Rashba spin-orbit coupling system and contacting metallic leads
Y. J. Jiang, PRB,74,195308(2006)
Key finding:
spin non-polarized current injected to a region with spin-orbital coupling may be reflected or transmitted with spin polarized current.